 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6931 2N6932 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO Collector-base voltage PARAMETER CONDITIONS 2N6931 2N6932 VCEO VEBO IC ICM IB IBM IE IEM PC Tj Tstg INCH Base current Collector-emitter voltage Emitter-base voltage ANG 2N6931 2N6932 EMIC ES Open emitter Open base Open collector DUC ON VALUE 450 TOR UNIT V 650 300 V 400 8 10 15 5 7 15 22 V A A A A A A W ae ae Collector current Collector current-peak Base current-peak Emitter current Emitter current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae 150 150 -65~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N6931 IC=0.2A ;L=25mH 2N6932 V(BR)EBO VCEsat VBEsat Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2N6931 ICEV Collector cut-off current 2N6932 IEBO hFE COB Emitter cut-off current IE=50mA ;IC=0 IC=10A ;IB=2A TC=100ae IC=10A ;IB=2A TC=100ae VCE=450V; VBE=-1.5V TC=100ae VCE=650V; VBE=-1.5V TC=100ae VEB=8V; IC=0 IC=10A ; VCE=3V f=1MHz;VCB=10V CONDITIONS 2N6931 2N6932 SYMBOL MIN 300 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 400 8 1.0 2.0 1.5 1.5 0.1 1.0 mA 0.1 1.0 2 mA V V V DC current gain Collector output capacitance Switching times resistive load td tr tstg tf Delay time Rise time HAN INC SEM GE OND IC 80 TOR UC 8 35 300 0.1 0.7 2.5 0.5 |I |I |I |I pF s s s s Storage time Fall time IC=10A; IB1=-IB2=2A VCC=300V, RC=30| VBB=-5V;tp=30|I s THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.83 UNIT ae /W 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6931 2N6932 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
Price & Availability of 2N6931
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |